The relationship of the atomic migration induced by this quantity to device failure is given by an Arrhenius (“ah-REE-nee-us”)-like equation derived by James R. Black; that migration due to this quantity is partially driven by a “wind force.” After passing through regions where this quantity is high, carriers can inject into the gate and sidewall oxides. (10[1])This quantity is obtained (-5[1])from the volume integral of the following, evaluated at the retarded time [read slowly to end of sentence]: rho over r-squared, all times r-hat, plus rho-dot over “c times r,” all times r-hat, minus j-dot over “c-squared times r.” In relativistic electrodynamics, this quantity is divided by c in the first row and column of a tensor (10[1])denoted capital (10[1])F. Mobility (10[2])times (10[1])this quantity equals drift velocity. (10[2]-5[1])The divergence of this quantity equals (-5[1])charge density (10[3])over epsilon-naught (10[1])by Gauss’s (“GOUSE-iz”) law. (10[1])For 10 points, (-5[1])name this quantity (10[1])whose strength has units of (10[1])volts per (10[1])meter. (10[1])■END■ (10[4])