The relationship of the atomic migration induced by this quantity to device failure is given by an Arrhenius (“ah-REE-nee-us”)-like equation derived by James R. Black; that migration due to this quantity is partially driven by a “wind force.” After passing through regions where this quantity is high, carriers can inject into the gate and sidewall oxides. This quantity is obtained from the volume integral of the following, evaluated at the retarded time [read slowly to end of sentence]: rho over r-squared, all times r-hat, plus rho-dot over “c times r,” all times r-hat, minus j-dot over “c-squared times r.” In relativistic electrodynamics, this quantity is divided by c in the first row and column of a tensor denoted capital F. Mobility times this quantity equals drift velocity. The divergence of this quantity equals charge density over epsilon-naught by Gauss’s (“GOUSE-iz”) law. For 10 points, name this quantity whose strength has units of volts per meter. ■END■
ANSWER: electric field [or E-field] (The first sentence refers to electromigration. The second sentence refers to hot carriers. The third sentence is Jefimenko’s equation for the electric field. The fourth sentence refers to the electromagnetic field tensor.)
<Physics>
= Average correct buzz position