The Deal-Grove model describes the rate of thermal oxidation of this material. The 1980s discovery that a porous version of this material displays room-temperature photoluminescence spurred interest in using it for photonics. This material is produced via deposition of a trichloro- precursor in the Siemens process. Pure boules of this material produced via the Czochralski process are cut then coated with (*) photoresist in one process. Due to cost, this indirect bandgap material’s polycrystalline form is more prevalent than its monocrystalline form for PV applications. This material, which shares diamond’s lattice structure, is often “doped” with group 13 or 15 elements like boron (10[1])or phosphorus to improve its conductivity. For 10 points, (10[1])wafers (10[1])of what elemental (10[1])semiconductor (10[1])are used to create integrated circuits? ■END■