The Deal-Grove model describes the rate of thermal oxidation of this material. The 1980s discovery that a porous version of this material displays room-temperature photoluminescence spurred interest in using it for photonics. This material is produced via deposition of a tri·chloro- precursor in the Siemens process. Pure boules of this material produced via the Czochralski process are cut and then coated with (*) photoresist (-5[1])in one process. (10[2])Due to cost, this indirect bandgap material’s (-5[1])polycrystalline form (10[1])is more prevalent than its monocrystalline form for PV applications. This material, which shares diamond’s lattice structure, is often “doped” (-5[1])with group 13 or 15 elements like boron or phosphorus to improve its conductivity. (-5[1])For 10 points, wafers (10[1])of what elemental (10[2])semiconductor are used to create integrated (10[1])circuits? (10[1])■END■ (10[3]0[5])