The first model of these devices’ behavior was proposed by Meyer, which was the progenitor for the BSIM series of models of these devices. As the resistance of early examples of these devices increased with temperature, they were not susceptible to secondary breakdown. Hitachi used a “vertical groove” geometry to manufacture the first “power” examples of these devices in 1969. CCDs have mostly been replaced in commercial active (*) pixel sensors by ones containing a photodiode and these devices. The circuit symbol for these devices may include a fourth terminal representing the substrate, which can affect the behavior of these devices via the “body effect” or “back-gating.” A “complementary” device made of an n- and p-type pair of these devices is widely used in logic circuits. For 10 points, what most common type of field-effect transistor is named for its three component layers? ■END■
ANSWER: MOSFET (“moss-fett”) [or metal–oxide–semiconductor field-effect transistor; accept IGFET or insulated gate field-effect transistor; accept pMOS; accept nMOS; accept CMOS (“C-moss”) or complementary metal–oxide–semiconductor field-effect transistor; prompt on transistor or field-effect transistor until “transistor” is read; reject “JFET” or “junction field-effect transistor”; reject “bipolar transistor” or “BJT”]
<CH/DC, Physics>
= Average correct buzz position