Question

A “quantum” form of this quantity proportional to the density of states reduces this quantity in 2D nanostructures. In 2019, Lukyanchuk et al. used ferroelectric nanoparticles to create devices with negative values (10[1])of this quantity. (10[1]-5[1])This quantity appears larger (10[1]-5[1])in the input of a transistor than its output in the Miller effect. “Super” devices with high values of this quantity, (-5[1])like EDLCs, (-5[1])are used in EVs because (10[1])they (-5[1])deliver power faster than (10[1])batteries. (10[1]-5[1])When circuit components are too close to each (10[2])other, a “parasitic” (10[1]-5[1])form (10[1])of this (10[1]-5[1])quantity (10[4])may (-5[1])decrease efficiency. (10[4]-5[2])This quantity is equal to (-5[1])“permittivity times cross-sectional area (-5[1])over (-5[1])distance,” (10[3]-5[1])and is (10[1])increased by sandwiching a dielectric. (10[2])The charge over the voltage (-5[1])defines, (10[1])for 10 points, what (10[1])quantity that measures the ability of a device to store charge? (10[1])■END■ (10[11]0[1])

ANSWER: capacitance [accept parasitic capacitance or quantum capacitance; prompt on C]
<Physics>
= Average correct buzz position

Buzzes

PlayerTeamOpponentBuzz PositionValue
Pranav VeluriBerkeley BBerkeley A3110
Danny Han (UG)PennColumbia B3410
Eshan Pant (DII)NYU AJohn Jay34-5
Joon LeeStanford BBerkeley C38-5
Karthik PrasadCornell BCornell C3810
Annie Goodman (Grad)GWU B (Grad)William & Mary A (UG)59-5
Jonathan Bost (UG)Liberty A (Grad)Maryland C (DII)61-5
Arunn SankarGeorgia Tech AVanderbilt B6610
James ByrneBristolImperial A67-5
Rasheeq Azad (UG)UNC B (UG)JMU B (UG)7110
Yashodev VyasMinnesota CArizona State72-5
Jacob RobertsonOxford AKCL7210
Sam Macchi (DII)VassarRowan8010
Sam HuttonCambridge CEdinburgh8010
Michał GerasimiukStanford AStanford C8310
Calvin Bostleman (DII)Ohio State AOhio State B83-5
Kenny Zhang (UG)Virginia A (UG)Liberty B (DII)8410
Ian DewanKielCambridge B86-5
Kai MadgwickDurham ASheffield8610
Brian Lai (DII)Virginia B (UG)Duke A (UG)8710
JD KrothIowa StateMinnesota B8710
Emmett Bicknell (DII)CedarvilleKenyon8710
Maxwell YeCambridge AOxford C8710
Yashwanth Bajji (DII)Michigan AMichigan C88-5
Danny CutbillRIT ARIT B9010
Jacob Martin (UG)Maryland B (UG)Roanoke College A (DII)9010
Albert Zhang (UG)Columbia CHaverford90-5
Forrest Weintraub (UG)Columbia ANYU B9010
Carlos DoebeliImperial BOxford B9010
Aisling SkeetDurham BWarwick90-5
Isaac Mammel (UG)Maryland A (Grad)Liberty C (DII)95-5
Gino DeLeoneBinghamtonCornell A99-5
Matthew SiffYale AHarvard B100-5
Vinu HariharBerkeley CStanford B10110
Bryan UgazArizona StateMinnesota C10110
Davin SivertsonAlabamaMTSU101-5
Jerry ZhangHarvard BYale A10110
Amogh KulkarniGeodesicGeorgia Tech B10310
Jack ObermanSouth CarolinaTennessee10810
Caden HausteinHardingVanderbilt A10810
Michael SunBrandeis BDartmouth A113-5
Bhargav Garre Venkata (DII)Virginia C (UG)JMU A (UG)11410
Rachel BenthamCambridge BKiel11810
Dillon PatelWarwickDurham B12910
Yared TadesseCornell ABinghamton13010
Brian Dudley (UG)William & Mary A (UG)GWU B (Grad)13010
Vedang Singhal (DII)UNC D (DII)GWU A (UG)13010
Daniel Kim (DII)Maryland C (DII)Liberty A (Grad)1300
Mitchell IndekMichigan CMichigan A13010
Matthew Lam (DII)Ohio State BOhio State A13010
Ethan Furman (DII)HaverfordColumbia C13010
Jerry VinokurovJohn JayNYU A13010
Michael MaysImperial ABristol13010
Jack LewisMTSUAlabama13010
Towery McNeilBoston UniversityBrandeis A13010
William DouganDartmouth ABrandeis B13010