Question
In a bipolar junction transistor, this process can be set using voltage dividers or emitter resistors. For 10 points each:
[10m] Name this process that defines the operating point of an electrical device. Band bending in p–n junctions can induce the “forward” or “reverse” types of this process.
ANSWER: biasing [accept forward bias or reverse bias]
[10e] Ideal instances of these electrical components have zero resistance in the forward bias polarity and infinite resistance in the reverse bias polarity, forcing current to only flow in one direction.
ANSWER: diodes
[10h] Crystal defects in diodes caused by transition metals can cause these undesirable energy states in the band gap. SRH recombination occurs when bands pass through these states that come in “shallow” and “deep” variants.
ANSWER: traps [accept shallow traps or deep traps]
<Brown, Physics>
Summary
| California | 2025-02-01 | Y | 3 | 10.00 | 67% | 33% | 0% |
| Florida | 2025-02-01 | Y | 3 | 3.33 | 33% | 0% | 0% |
| Midwest | 2025-02-01 | Y | 6 | 20.00 | 100% | 83% | 17% |
| Overflow | 2025-02-01 | Y | 5 | 8.00 | 60% | 20% | 0% |
| Pacific Northwest | 2025-02-01 | Y | 2 | 10.00 | 50% | 50% | 0% |
| South Central | 2025-02-01 | Y | 2 | 15.00 | 100% | 50% | 0% |
| Southeast | 2025-02-01 | Y | 3 | 10.00 | 67% | 33% | 0% |
| UK | 2025-02-01 | Y | 10 | 11.00 | 50% | 10% | 50% |
Data
| Georgetown A | Notre Dame C | 0 | 0 | 0 | 0 |
| Iowa | Georgetown B | 0 | 0 | 0 | 0 |
| Northwestern B | Northwestern A | 0 | 10 | 0 | 10 |
| Notre Dame A | Purdue | 0 | 10 | 0 | 10 |
| Stanford B | Notre Dame B | 10 | 10 | 0 | 20 |