Optimal pressures for this process can be determined using Brewster angle microscopy. Fine-tuning for one type of this process can be done using RHEED (“reed”) systems centered on an electron gun. Instabilities during this process can arise from misfit strain in the Stranski–Krastanov model of “island” coalescence. Liquified petroleum gas and copper foils are used to produce graphene in one form of this process. Material formed by this process can be removed by reactive ion etching. This process is done epitaxially with gallium and arsenic molecular beams (-5[2])in MOSFET (“moss-fet”) production. The chemical and physical vapor types of this (10[2])process are used to generate thin films for semiconductor wafers. For 10 points, name this process of transferring gas particles onto a solid surface, the opposite of sublimation. ■END■ (10[2])