Question
Answer the following about techniques used in semiconductor manufacturing. For 10 points each:
[10h] First, this technique may be used, where crystalline layers are grown in a well-defined orientation with respect to a heated seed under an ultra-high vacuum. Reflection high-energy electron diffraction is used to monitor this process that has a much slower deposition rate than comparable techniques.
ANSWER: molecular-beam epitaxy [or MBE; prompt on epitaxy; prompt on chemical vapor deposition or physical vapor deposition or CVD or PVD]
[10m] Next, this technique shines light onto a photoresist through a photomask to transfer a pattern onto a silicon wafer. The extreme ultraviolet form of this technique uses 13.5 nanometer wavelength light.
ANSWER: photolithography [or optical lithography; accept extreme ultraviolet lithography]
[10e] Finally, silicon wafers can undergo the reactive-ion form of this technique using plasma or the “wet” form of this technique using buffered hydrofluoric acid. Unlike engraving, this technique chemically removes material.
ANSWER: etching [accept reactive-ion etching; accept wet etching]
<Science - Chemistry>
Summary
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Data
| throw away your cards, rally in the streets | UBC | 0 | 10 | 10 | 20 |
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