Transistors switched using this phenomenon, as opposed to thermal injection, are predicted to break the 60 millivolt-per-decade subthreshold swing limit currently impairing power scaling. A magnetoresistive effect named for this phenomenon is the operating principle of MTJs. A form of this phenomenon used to erase NOR flash memory chips is the mechanism for field emission. This phenomenon causes the negative differential resistance of an Esaki diode. The current due to this phenomenon varies with the height of a metal tip above a sample in a form of microscopy. Alpha particles escape from the nucleus’s attractive potential via this process in Gamow’s model of alpha decay. For 10 points, name this quantum phenomenon in which a particle passes through a classically forbidden barrier. ■END■
ANSWER: quantum tunneling [accept tunnel FETs; accept tunnel magnetoresistance; accept Fowler–Nordheim tunneling; accept tunnel diodes; accept scanning tunneling microscopy]
<Physics>
= Average correct buzz position