Under ideal conditions, this quantity is zero at the gate of a MOSFET. In a bipolar junction transistor, the letter beta represents a ratio of two of these quantities (10[1])at the collector and base. A formula to calculate this quantity for one type of device includes an exponential of the "voltage across the (10[1])device divided by the thermal voltage times ideality factor." One type of this quantity in a semiconductor arises from variations in carrier concentration and obeys Fick's (-5[1])law. (-5[1])Semiconductors (10[1])experience "drift" and "diffusion" forms of this quantity. This quantity in a diode is calculated by the Shockley (-5[1])diode equation. The y-axis of an I-V curve contains this quantity, (-5[1])whose conventional form flows from collector to emitter in an NPN transistor. For 10 points, name this quantity measured in amperes. (10[1])■END■ (10[4])