In the second-most common design for photovoltaic thin films, copper indium gallium selenide lies below a window layer of this element’s sulfide. For 10 points each:
[10m] Name this element that is [emphasize] directly bonded to tellurium in the most common photovoltaic thin film.
ANSWER: cadmium [or Cd]
[10e] The cadmium sulfide layer in a CIGS (“sigs”) solar cell lies underneath a conducting film of tin oxide that has this optical property. Indium tin oxide is used in electronics because it has this property of transmitting nearly all light.
ANSWER: transparent [or transparency; accept transparent conducting oxides]
[10h] The third-most common photovoltaic thin film absorber is amorphous silicon that has undergone this process to remove dangling bonds. Chemical formulas represent silicon that has undergone this process as: “Si,” then a colon, then a capital letter.
ANSWER: hydrogenation [or hydrogen incorporation or hydrogen impregnation; or alloying with hydrogen; accept any descriptions of the addition of hydrogen or H; accept hydrogenated amorphous silicon; prompt on reduction or word forms of reduce; prompt on passivation or word forms of passive or passivate]
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